Photoluminescence and Raman spectroscopy in porous SiC

نویسندگان

  • T. V. Torchynska
  • A. Díaz Cano
  • S. Jiménez Sandoval
  • M. Dybiec
  • S. Ostapenko
  • M. Mynbaeva
چکیده

This paper presents results of porous Sic characterization using photoluminescence, Raman scattering and Atomic Force Microscopy. A comparative optical spectroscopy study on bulk Sic and porous Sic layers has shown a number of new features specific to nano-crystallite materials. The role of these effects on optical spectroscopy data in porous Sic accessed by photoluminescence and Raman scattering is discussed. O 2005 Elsevier Ltd. Al1 rights reserved.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Understanding spectroscopic phonon-assisted defect features in CVD grown 3C-SiC/Si(1 0 0) by modeling and simulation

New phonon-assisted defect features are observed using photoluminescence (PL) and Raman scattering spectroscopy on 3C-SiC/Si(1 0 0) films grown by chemical vapor deposition (CVD) technique. The ultraviolet excitation roomtemperature (RT) PL-Raman spectra show a luminescence band near 2.3 eV due to RT recombination over the 3C-SiC indirect band gap. In addition to the strong Raman lines characte...

متن کامل

Combined optical, surface and nuclear microscopic assessment of porous silicon formed in HF-acetonitrile

A new type of HF solution, HF-acetonitrile (MeCN), has been employed to produce 10–30 Am thick porous silicon (P-Si) layers by photoelectrochemical etching of different types of Si wafers, Si(100), Si(111) and polycrystalline Si, with different resistivities. A combined optical, surface and nuclear microscopic assessment of these P-Si layers was performed using photoluminescence (PL), Raman sca...

متن کامل

Non-Destructive Evaluation of SiC wafer for Power Device Defect detection in μm~nm scale using optical analytical technique

Tomoaki HATAYAMA Power devices using Silicon Carbide (SiC) are already commercialized and are moving into mass production, but commercial SiC wafers have several types of defects. It is important to have techniques for analyzing a variety of defects, because these defects decrease the yield ratio of SiC devices. In this paper, we did complex analysis on sub-millimeterand nanometer-scale defects...

متن کامل

Control capability of electrolytic concentration on refractive index and dielectric constant of porous Silicon layers

Porous Silicon (PS) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying HF concentrations in the electrolytic solution. The structural, surface morphological, optical and surface composition analysis of the prepared samples were done by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Photoluminescence (PL) and Fourier transform infr...

متن کامل

Control capability of electrolytic concentration on refractive index and dielectric constant of porous Silicon layers

Porous Silicon (PS) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying HF concentrations in the electrolytic solution. The structural, surface morphological, optical and surface composition analysis of the prepared samples were done by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Photoluminescence (PL) and Fourier transform infr...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Microelectronics Journal

دوره 36  شماره 

صفحات  -

تاریخ انتشار 2005